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Low capacitance RF Schottky diodes

Selection guide
ロー キャパシタンス RF ショットキーダイオード
1PS76SB17 - 4V; 30mA; single; SOD323 (SC-76)
1PS79SB17 - 4V; 30mA; single; SOD523 (SC-79)
1PS88SB82 - 15V; 30mA; triple isolated; SOT363 (SC-88)
1PS10SB82 - 15V; 30mA; single; SOD882
1PS66SB17 - 4V; 30mA; triple isolated; SOT666
1PS66SB82 - 15V; 30mA; triple isolated; SOT666
1PS70SB82 series - 15V; 30mA; single, dual; SOT323 (SC-70)
BAT17 - 4V; 30mA; single; SOT23
PMBD353 - 4V; 30mA; dual series; SOT23
PMBD354 - Schottky barrier double diode

Exceedingly low capacitance (< 1 pF)

Low capacitance (< 1 pF) Schottky diodes are well suited to all high frequency applications. They are used specifically for the gain control stages in the RF part of a mobile phone. Some devices have a capacitance 94% lower than an industry standard BAT54, or less than one third of existing low capacitance diodes such as the BAS40, achieved with no trade off in breakdown voltage specification.

Key benefits

  • (Very) low diode capacitance
  • (Very) low forward voltage
  • Single and triple-isolated diode
  • (Ultra / very) small package

Key features

  • Low diode capacitance(< 1 pF)
  • Low forward voltage
  • Ultra-small plastic SMD package (SOD882)
  • Single, double and triple configurations available
  • Ultra-high switching speed

Key applications

  • Digital applications:
    - ultra high-speed switching
    - clamping circuits
  • RF applications:
    - diode ring mixer
    - RF detector
    - RF voltage doubler